国家/地区 中国（3） 美国（2）
IPC部 C（5）
IPC大类 C30（5） C23（3） C01（2）
H01（2）
IPC小类 C30B（5）
IPC C30B025/02（5）
发明人
公开年 2015（5）
申请年 2015（3）  2014（2） 
专利权人

Preparation of single-crystal graphene involves taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding hydrogen and argon and heating.

WANG X, LI J, ZHONG Q, ZHONG Y

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Device for preparing large-size high-quality single crystal graphene on silicon carbide substrate, has intermediate frequency coil located for induction heating of graphite heating element in graphite crucible.

CHEN X, CHENG X, SUN L, YANG Z, XU S, YU F, ZHAO X

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A