国家/地区 日本（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C01B031/02（3） C23C016/26（3） C30B025/18（3）
H01L021/205（3） C23C016/34（2） H01L021/02（2）
H01L021/20（2） H01L029/16（2） H01L033/00（2）
发明人 FAN F Y（2） FAN S（2） GI Y（2）
WEI Y（2）
公开年 2013（5）
申请年 2012（3）  2013（2） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M