国家/地区 中国（2） 日本（2） 美国（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C01B031/02（4） C30B029/02（4）
发明人
公开年 2011（5）
申请年 2010（5）
专利权人

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Growing graphene on big-diameter silicon carbide carbon surface involves polishing and cleaning silicon carbide wafer carbon surface, putting the wafer in graphite tray, pumping the degree of vacuum, and pouring high-purity argon.

HU X, XU X, CHEN X, WEI R

Graphene substrate used in graphene electronic device, has base substrate which is insulating monocrystal substrate provided with monoatomic step structure on surface.

OGINO TOSHIO, TSUKAMOTO TAKAHIRO, KOYAMA KOUJI, SUNAGAWA KAZUHIKO

Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.

BARKER D L, OWENS W R, BECK J W

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V