国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） H01（2）
IPC小类 C30B（5）
IPC C30B025/18（5）
发明人 ZHANG J（3）
公开年 2018（2） 2020（2）
申请年 2018（5）
专利权人

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H