国家/地区 中国（6）
IPC部 C（6）
IPC大类 C22（6）
IPC小类 C30B（6）
IPC C22F001/02（4） C22F001/08（4） C30B029/02（4）
C01B032/194（2） C21D009/46（2） C22C009/02（2）
C30B025/18（2）
发明人
公开年 2021（2）
申请年 2021（2） 
专利权人

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Radiating table designed with special water channel of alloy material, has heat dissipation pipe fitting to water pipe through groove, heat dissipation platform provided with several waterway annular grooves communicated with water pipe through groove.

ZHAO J, HU C, HU C Q, ZHAO J H

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G