国家/地区 美国（12） 世界知识产权组织（9） 中国（7） 欧洲专利局（EPO）（6） 韩国（6） 日本（4） 英国（3） 台湾（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15） C23C（14） B32B（4）
B82Y（4） H01L（4） C30B（3）
B01J（2） B05D（2） C23F（2）
G01N（2） G06F（2） H01B（2）
IPC C01B032/186（15）
发明人
公开年 2016（15）
申请年 2015（9）  2016（4）  2014（2） 
专利权人 SNU R DB FO.（2） UNIV SEOUL N.（2）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Method for growing graphene nano-petals on carbon fiber, involves providing cloth base with fibers that are not fully carbon, and growing graphene petals integrally on carbonized cloth base using same plasma process.

FISHER T, XIONG G

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G