国家/地区 中国（13）
IPC部 C（13）
IPC大类 C01（13） H01（3） B82（2）
H05（2）
IPC小类 C01B（13）
IPC C01B032/194（13）
发明人 CHENG H（13）
公开年 2018（5） 2022（5）
申请年 2016（4）  2022（4）  2021（3） 
专利权人 INST METAL R.（9）

Preparing a high-performance thermal interface material by using mold to squeeze three-dimensional porous metal, heating, performing catalytic growth of graphene on the surface of a porous metal substrate and using vacuum impregnation process to fill polymer substrate in the porous graphene pores.

CHENG H, LIU H, MA C, REN W

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Preparation of mesoporous reduced graphene oxide absorbent used for preparing wave-absorbing material, involves adding graphene oxide powder to reducing agent aqueous solution, heating using blast drying oven, cleaning product using deionized water, freeze drying and grinding.

CHEN Y, WEN Q, CHENG H, SUO J, YE X

Preparation method of high density smooth graphene heat conducting film, involves completing graphene film densification process by programmed temperature and programmed pressure, and obtaining high-density smooth graphene film.

LIU Y, CHENG H, HUANG K, WANG G, WEI T

Method for preparing graphene film, involves obtaining three-dimensional connected graphene framework structure with high density, obtaining three-dimensional graphene porous, and pressing obtained three-dimensional graphene porous to form graphene film.

CHENG H, LIU H, MA C, REN W

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Preparing 3D nanostructure electromagnetic wave absorbing material in flexible electromagnetic wave absorbing film, involves dispersing metallocene, graphene in acetonitrile to obtain dispersion and subjecting to microwave reaction.

LIANG B, FENG M, ZHANG K, CHENG H, LUO B, ZHAO Z

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Preparation of heterostructure porous graphene oxide film used for forming graphene film for generator, involves freeze-drying graphene oxide solution, heating, reducing, and applying pressure to resultant product in vertical direction.

QU L, CHENG H, HUANG Y

High efficient doped graphene useful in electronics and optoelectronic devices, comprises super strong acid or mixture containing super strong acid.

MA L, REN W, DONG S, CHENG H