国家/地区 韩国（8）
IPC部 C（8）
IPC大类 C01（8） H01（5） B82（2）
IPC小类 C01B（8）
IPC C01B031/04（7） H01L029/16（3） B82Y030/00（2）
B82Y040/00（2） C01B032/182（2） H01L021/768（2）
H01L023/532（2）
发明人 PARK S（8）
公开年 2016（5） 2015（2）
申请年 2015（8）
专利权人 SAMSUNG ELEC.（4） LG CHEM LTD（3） LG CHEM CO L.（2） PARK S（2）

Preparation of graphene composite for oxidation-reduction catalyst, involves preparing graphene oxide dispersion, adding reducing agent, adding precursor containing iridium chloride and hydrothermally reacting.

PARK S, CHOI K R

Manufacture of graphene involves supplying graphite feed solution containing dye and including intramolecular anthraquinone, triphenylmethane, azobenzene or phthalocyanine structure, into high-pressure homogenizer comprising microchannel.

LEE M J, SOHN K N, PARK S H, SOHN K, PARK S

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Partially-oxidized graphene used for forming sheet for electrical component and structural component, has oxygen-carbon atomic ratio, lateral size and thickness of specified value.

SOHN K N, LEE M J, KWON W J, PARK S H, YOO K H, SOHN K, LI M, KWON W, PARK S, YOO K

Production of graphene used for electronic component, involves high-speed homogenizing dispersion solution containing expanded graphite and dispersing agent, preparing feed solution, and high-pressure homogenizing.

YANG S B, KWON W J, PARK S H, LEE M J, SOHN K N, YANG S, SOHN K, KWON W, PARK S, LI M

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H