国家/地区 中国（5）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） H01L（3） C25D（2）
H01G（2）
IPC C23C016/26（6）
发明人 ZHANG J（6）
公开年 2013（2）
申请年 2012（2）  2020（2） 
专利权人 UNIV XIDIAN（3）

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Flexible complex film comprises nano porous gold film layer, polypyrrole layer, nano gold particle embedded in polypyrrole layer and graphene layer, prepared e.g. by preparing nano porous gold film by removing alloying free corrosion method.

HOU Y, ZHANG H, YANG Y, ZHANG J, GUO J

Preparation of graphene carbon nanotubes composite film for hybrid Schottky diode, involves using substrate whose entire or one surface is graphene catalyst, performing electroplating and carrying out chemical vapor deposition.

YANG L, CHEN Z, XU X, ZHANG J, YIN L, WU H, LIAO W, LI Q, BECK T J

Growing nitride epitaxial wafer used for gallium nitride-based lasers involves polishing copper substrate, cleaning, forming graphene layer, transferring graphene layer to target substrate, and growing aluminum nitride layer.

WANG W, LONG H, LI Z, LI M, ZHANG J

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y