国家/地区 美国（21） 韩国（19） 日本（14） 世界知识产权组织（14） 中国（11） 欧洲专利局（EPO）（5） 台湾（5）
IPC部 C（31）
IPC大类 C01（31）
IPC小类 C01B（31）
IPC C01B031/02（31）
发明人 FAN F Y（4） FAN S（4） HONG B H（4）
JIANG K（4） LIN X（4） XIAO L（4）
HONG B（3） LIN X Y（3） AHN J（2）
AHN J H（2） AN K S（2） BAE S（2）
BAE S K（2） CHOI I（2） CHOI I S（2）
公开年 2012（31）
申请年 2011（18）  2012（10）  2010（3） 
专利权人 HON HAI PREC.（4） HONGFUJIN PR.（4） KOREA ADV IN.（4） UNIV TSINGHU.（4）
HANWHA TECHW.（3） SAMSUNG ELEC.（3） SAMSUNG TECH.（3） GRAPHENE SQU.（2）
KOREA ADVANC.（2） KOREA RES IN.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S