国家/地区 日本（4） 美国（4） 中国（3） 韩国（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 C23C（6） B01J（5） C01B（4）
B82Y（2） C25D（2） C30B（2）
IPC C23C014/34（6）
发明人
公开年 2021（2）
申请年
专利权人

Achieving uniform particulate type deposition of functionalized graphene platelets on carbon fiber fabric, involves preparing aqueous solution comprising magnesium salt and solvent, subjecting aqueous solution to sonication, dispersing functionalized graphene platelets in sonicated solution.

SINGH A, JATOTHU P K

Loaded body for fuel cell, has sputtering source, pulse power supply, inert gas supply unit and nanocluster growth cell, where when nanoclusters are produced in vapor phase using nanocluster generating device, and nanoclusters are supported on carrier, each carriers loaded with nanoclusters.

NAKAJIMA A, TSUNOYAMA H, UNO M, GUNJI H, ANDO T, TSUKAMOTO K, TONA M, HIRATA N

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H