国家/地区 美国（7）
IPC部 B（7）
IPC大类 B32（7）
IPC小类 B32B（7） C03C（7） C01B（6）
B82Y（5） C23C（5） B44C（4）
H01L（3） C23F（2）
IPC C03C025/68（7）
发明人 IM H Y（2） JIANG K（2） LIN X（2）
公开年 2012（5） 2009（2）
申请年 2011（5）  2009（2） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene oxide nanoplatelets and derived products, comprises e.g. dosing e.g. a hydrocarbon or mixture of hydrocarbons, placing dosed compounds inside a furnace, and obtaining intermediate material comprising carbon nanofilaments.

MERINO S C, MARTIN G I, VARELA R H, MERINO A M D P, MERINO SANCHEZ C, MARTIN GULLON I, VARELA RIZO H, MERINO AMAYUELAS M D P, RIZZO H V, SANCHEZ C M, OMARYERAS M D P M, GULLION I M

Removing a single graphene layer from a graphene material comprises applying a metal to a surface of the graphene material, and applying a hydrogen containing solution to the surface of the graphene material.

TOUR J M, DIMIEV A M, KOSYNKIN D V

Making transmission electron microscope grid comprises e.g. applying carbon nanotube film structure to a graphene layer to obtain a graphene layer-carbon nanotube film composite structure, and placing the composite structure on a grid.

LIN X, FENG C, ZHANG L, JIANG K, IM H Y, ZHANG L N

Suspending graphene membrane across gap in support structure, comprises attaching graphene to substrate, attaching pre-fabricated support structure having the gap to graphene, and separating graphene and structure from substrate.

MEYER J C, ZETTL A K

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S