国家/地区 台湾（13）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13） H01B（6） H01L（5）
H01M（5） H01G（4） B01F（3）
C09C（3） B82Y（2） C08K（2）
C09D（2） C09K（2） C23C（2）
G03F（2）
IPC C01B031/04（5） C01B032/182（5） C01B032/194（5）
C01B032/15（4） C01B032/18（4） H01G011/36（4）
B01F003/12（3） C01B031/02（3） C01B032/184（3）
C01B032/19（3） C09C001/46（3） H01G011/32（3）
H01G011/86（3） H01M004/139（3） H01M004/36（3）
发明人 KAWASAKI M（3） TAMAKI E（3） HIRAI Y（2）
YOSHIHIDE H（2）
公开年 2017（11） 2018（2）
申请年 2016（13）
专利权人 TORAY IND IN.（3）

Production of graphene used in e.g. sensor, involves exfoliating working electrode of electrochemical cell containing aqueous electrolyte comprising exfoliating ions, to produce graphene having specified engineered characteristics.

CHAKI N K, DAS B, DEVARAJAN S, SARKAR S, RAUT R, SINGH B, PANDHER R, KHASELEV O, DIFFARAJAN S, LAUT R, PANDE R, COSERLEF O

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Thermally conductive composition of graphene used as thermal paste for high wattage LED substrate.

HSU C, CHANG C

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Reduced graphene oxide film used for forming electrode of supercapacitor device, comprises three-dimensional hierarchy of pores, and has preset active density.

KANER R B, SHAO Y

Electrode material used for capacitor, comprises composite of microparticles, and carbon material having graphene layered structure, and having preset specific surface area measured by methylene blue adsorption.

OHARA S, SASAGAWA N, FUJIWARA A

Method for manufacturing pellicle for lithographic apparatus involves removing first substrate portion to form freestanding membrane from graphene layer, in which freestanding membrane is supported by second substrate portion.

PETER M, ABEGG E A, GIESBERS A J, KLOOTWIJK J H, NASALEVICH M A, VAN DEN EINDEN W T, VAN DER ZANDE W J, VAN ZWOL P, VERMEULEN J P M, VLES D F, VOORTHUIJZEN W, GIESBERS A J M, VAN ZWOL P J, VOORTHUIJZEN W P, VAN DEN EINDEN W T A J, VERMEULEN J P M B

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Graphene dispersion liquid used for manufacturing composite particles, is obtained by dispersing graphene having preset ratio of median diameter with respect average value of size along plane direction in organic solvent.

HIRAI Y, TAMAKI E, KAWASAKI M, YOSHIHIDE H

Graphene dispersion liquid used for manufacturing active material composite particles, is obtained by dispersing graphene in solvent comprising specified amount of N-methylpyrrolidone, and has preset weight absorptivity coefficient.

MANABE K, TAMAKI E, KAWASAKI M