国家/地区 美国（4） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5） C30B（5） H01L（3）
B82Y（2）
IPC C30B033/02（5）
发明人
公开年
申请年 2017（2） 
专利权人

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X