国家/地区 中国（7）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/04（7）
发明人 ZHANG M（8）
公开年 2014（8）
申请年 2013（4）  2014（4） 
专利权人 SHENZHEN YUE.（5） SHENZHEN YUE.（3） SHANGHAI INS.（2）

Preparation of graphene quantum dots by mixing monolayer graphene oxide and solvent, adding hexagonal crystal structured-zinc oxide and stabilizer, dispersing, reacting, adding acid, filtering, adjusting pH, filtering, and extracting.

ZHANG M, ZHANG L

Preparing anthracite based graphene oxide comprises washing smokeless coal with water and then drying, crushing and sieving to obtain smokeless coal powder and then melting, washing with water and drying.

ZHANG M, ZHANG L

Promoting osteogenesis useful for preparing medicine for treating bone defects and osteoporosis, and exhibiting anti-cancer and anti-aging effect, involves using germanium-graphene.

XIE X, ZHANG M, LI J, YE L, LIU X, DI Z, CHEN D, DING G, GUO Q, WANG G

Restoration of reduced graphene oxide involves dispersing graphene oxide in solvent, reacting with Lewis acid and e.g. methyl-containing compound, purifying, reacting with another Lewis acid and aromatic hydrocarbon, and purifying.

ZHANG L, ZHANG M

Preparation of graphene quantum dots involves uniformly dispersing graphene oxide in solvent, reacting with reducing agent, cooling, separating solid, mixing with reducing polyhydroxyaldehyde and organic acid, and Lewis acid, and dispersing.

ZHANG L, ZHANG M

Preparation of graphene oxide based on mixed acid system for graphene preparation involves dispersing graphite powder in intercalating agent, adding dispersing agent, dissolving oxidant in acid component, and adding long chain organic acid.

ZHANG L, ZHANG M

Thermal interface material used to increase thermal conduction or thermal dissipation across interface comprises three-dimensional interconnected porous graphene foam structure constructed of three-dimensional interconnected graphene sheets.

YUEN M M F, ZHANG X, YEUNG K K, GAO Z, ZHANG K, ZHANG M, XU H

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z