国家/地区 中国（3） 世界知识产权组织（3） 日本（2） 台湾（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C30B（6）
IPC C01B032/186（3） C23C016/26（3） C30B029/02（3）
C01B032/182（2） C23C016/02（2） C30B033/12（2）
H01L021/02（2） H01M004/62（2）
发明人
公开年 2022（4） 2023（2）
申请年 2022（6）
专利权人 TOKYO ELECTR.（2）

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Ionic plastic crystal used in electrochemical cell, supercapacitor, and solid electrolyte composition for electrochemical cell, comprises delocalized anion paired with cation derived from organic guanidine, amidine or phosphazene superbase.

DAIGLE J, BARRAY F, GUERFI A, FLEUTOT B, GARITTE E, KRACHKOVSKIY S, KOH K S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN