国家/地区 中国（10） 欧洲专利局（EPO）（10） 日本（10） 韩国（10） 台湾（10） 美国（10） 世界知识产权组织（10） 印度（7） 以色列（4） 俄罗斯（4） 新加坡（4）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（10）
发明人 MUELLEN K（9） FENG X（8） MULLEN K（8）
SCHWAB M G（7） MILLEN K（6） SCHWAB M G S（5）
FASEL R（4） RUFFIEUX P（4） CAI J（3）
SCHVAB M G（3） TSAI J（3） DUMSLAFF T（2）
HINTERMANN T（2） NARITA A（2）
公开年 2013（4） 2015（4） 2014（2）
申请年 2013（4）  2012（3）  2014（2） 
专利权人 BASF SE（10）

New ortho-terphenyl derivatives used for preparing graphene nanoribbons for thin film semiconductor for use in optical device, such as organic field effect transistor device, organic photovoltaic device or organic light-emitting diode.

SCHWAB M G, MULLEN K, FENG X, DUMSLAFF T, RUFFIEUX P, FASEL R, MUELLEN K

Graphene nanoribbon comprises repeating unit comprising edge carbons which can unambiguously be assigned as zigzag or cove type carbon atoms.

SCHWAB M G, MUELLEN K, FENG X, YANG B, DUMSLAFF T, FASEL R, RUFFIEUX P, LIU J, CAI J, SANCHEZSANCHEZ C, MULLEN K, SANCHEZ S C, TSAI J, MILLEN K

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K

New oligophenylene monomers, useful for synthesizing polymeric precursors for preparing graphene nanoribbons.

IVANOVICI S, SCHWAB M G S, FENG X, MUELLEN K, SCHWAB M G, MULLEN K, KLAUS M, SCHVAB M G, SCHWAB M, MILLEN K

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G