国家/地区 台湾（10）
IPC部 B（10）
IPC大类 B82（10）
IPC小类 B82Y（10）
IPC B82Y040/00（10）
发明人 FENG X（4） MUELLEN K（4） MULLEN K（4）
SCHWAB M G（4） MILLEN K（3） SCHWAB M G S（3）
CAI J（2） FASEL R（2） RUFFIEUX P（2）
SCHVAB M G（2） TSAI J（2）
公开年 2013（5） 2015（2）
申请年 2012（3）  2013（3）  2014（2） 
专利权人 BASF SE（5） BASF CHINA C.（4） MAX PLANCK G.（4） BASF AG（3）
EMPA EIDGENO.（2）

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Graphene nanoribbon comprises repeating unit comprising edge carbons which can unambiguously be assigned as zigzag or cove type carbon atoms.

SCHWAB M G, MUELLEN K, FENG X, YANG B, DUMSLAFF T, FASEL R, RUFFIEUX P, LIU J, CAI J, SANCHEZSANCHEZ C, MULLEN K, SANCHEZ S C, TSAI J, MILLEN K

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G

Forming graphene oxide salt involves mixing graphite and oxidizer having alkali metal salt, ionizing oxidizer having alkali metal salt with acid solution, removing oxidizer, separating graphene oxide and reacting graphene oxide and base.

NOMOTO K, INOUE N, YUKAWA M, IKENUMA T, YUGAWA M

New chelating agent modified graphene oxide useful e.g. in solar cells and to produce metal catalysts, to remove metal ions (e.g. nickel, mercury, cadmium, copper and cobalt) for producing drinking water, and to produce lithium ion battery.

HOU S