国家/地区 美国（8） 世界知识产权组织（8） 韩国（7） 日本（6） 中国（5） 欧洲专利局（EPO）（5） 台湾（4） 印度（2） 俄罗斯（2） 新加坡（2）
IPC部 B（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B031/02（9）
发明人 MILLEN K（2） MUELLEN K（2）
公开年 2014（4） 2013（3） 2015（2）
申请年 2013（9）
专利权人 BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Phase transfer catalyst used in addition or condensation organic reaction, comprises graphene oxide catalyst having oxygen-containing functional group.

KIM Y, LEE H, SOME S

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Manufacture of reduced graphene oxide involves reacting solid hydrazine compound or its derivative with carbon dioxide, using obtained hydrazine compound as reducing agent for reducing graphene oxide.

HUR N H, LEE B, LEE K H

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

New imidazolidine-type compound used for mixed ionic liquid for preparation of graphene dispersion liquid for electronic component e.g. energy storage electrical appliance and lithium-ion secondary battery.

AIDA TAKUZO, PARK CHIYOUNG, RAVI SAISUWAN, MATSUMOTO MICHIO, AIDA T, PARK C, RAVI S, MATSUMOTO M

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A