国家/地区 韩国（5） 美国（3）
IPC部 C（5） H（3）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（3） H01B（2）
IPC C01B031/02（3） C23C016/26（3） C01B031/04（2）
C23C016/06（2） C23C016/44（2） C23C016/455（2）
发明人 CHO B J（2） MUN J H（2）
公开年 2014（3）
申请年 2013（5）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（5）

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene, has metallic foil that is deposited on substrate placed above sealing element provided between cover plates.

AHN C W, KANG I S, SHIN Y H, YOO K

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S