国家/地区 中国（12）
IPC部 C（12）
IPC大类 C23（12）
IPC小类 C23C（10） B22F（3） C01B（2）
C04B（2） C23F（2） C30B（2）
H01L（2）
IPC C23C016/26（4） B22F001/02（2） C23C014/06（2）
C30B025/18（2）
发明人 ZHANG F（12）
公开年 2012（3） 2021（2） 2022（2） 2023（2）
申请年 2021（3）  2022（3）  2012（2） 
专利权人 UNIV XIDIAN（2）

Preparing graphene coated titanium electrode used in field of carbon nano material, involves dispersing oxidized graphene in water, adding ammonium bromide solution into dispersion, coating liquid on surface of titanium electrode, polishing electrode surface and removing redundant graphene material.

WANG J, LU Y, GE M, ZHANG F, CUI D

Preparing expanded graphite composite wave-absorbing coating, comprises e.g. dissolving cobalt salt and nickel salt in solvent, stirring, adding silane coupling agent, mixing with expanded graphite, vacuum filtering, adding butylamine, heat treating, adding solvent and binder, and plasma spraying.

CHEN Y, WANG Y, WANG M, LIU X, ZHANG F, SUN M, ZHAO D

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing graphene-reinforced red copper contact material useful for electric contact i.e. electric switch and instrument assembly, comprises mixing solid carbon source and catalyst, pre-coating on surface of red copper material, irradiating by high-power laser, and growing surface-covered graphene.

HE Y, DU X, GUO D, ZHANG F, TANG B, LV T, CAO Y, XU G

Magnetic graphene oxide/carboxymethyl chitosan compound corrosion inhibitor comprises magnetic graphene oxide and carboxymethyl chitosan, where magnetic graphene oxide is graphene loaded magnetic nano particles.

WANG L, HAN F, ZENG G, CHEN W, HU Y, ZHANG F

Preparation method of high pressure and high specific volume corrosion foil by soaking aluminum foil in solution containing phosphoric acid for degreasing, applying direct current, corroding, sintering, and soaking in nitric acid solution.

SHEN Z, XIE Y, LI J, WU W, HUO J, ZHANG S, FENG Z, YANG F, LIU J, ZHANG F

Preparing graphene-reinforced copper-based complex material comprises sintering raw materials by hot pressing or spark plasma (SPS) to convert amorphous carbon film into graphene microcrystals.

YANG Y, ZHANG F, XIA L, LI F

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Coating graphene coated material utilizing resistive material, metal powder, flame retardant and resistance sintering agent.

KONG R, GENG B, ZHANG F

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F