国家/地区 中国（4） 韩国（3） 美国（3） 世界知识产权组织（2）
IPC部 C（6） B（4）
IPC大类 C23（6）
IPC小类 C23C（6） C01B（3） B32B（2）
B82Y（2）
IPC C23C014/06（6）
发明人
公开年 2012（6）
申请年 2011（3）  2012（2） 
专利权人

Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.

KE P, WANG A, ZHANG X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Preparation of graphene involves placing monocrystalline silicon substrate on heating table, regulating sputtering power on carbon target and germanium target, coating film on substrate surface and heating obtained germanium carbide.

HAN J, JING C, ZHU J, YU H

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Method of manufacturing grapheme used in FET, involves forming graphene on catalyst layer by cooling catalyst layer, and taking out supporting belt, on which catalyst layer is loaded and graphene is formed, from chamber to outside.

CHO S, WON D, CHO S M, WON D K, CHO S H

Fabrication method of graphene film, involves forming metal film having metal layer on substrate.

CHOO S J, BAHNG W