国家/地区 中国（742）
IPC部 C（742）
IPC大类 C23（742）
IPC小类 C23C（742） C01B（226） B82Y（81）
H01L（78） B22F（50） B32B（50）
C30B（50） H01B（40） C22C（35）
C25D（32） H01M（25） B01J（22）
B05D（19） G01N（19） C23F（18）
IPC C23C016/26（742）
发明人 ZHANG Y（54） SHI H（42） LI Z（41）
ZHANG J（33） WANG Y（32） LI X（30）
LIU Z（30） ZHANG X（29） HUANG D（28）
LIU Y（27） WANG X（24） WANG Z（24）
LI J（23） CHEN Z（22） MA Y（22）
公开年 2022（94） 2020（88） 2021（84） 2017（78） 2016（63） 2018（62） 2015（58） 2013（45） 2012（44） 2014（41） 2019（32） 2023（29） 2011（19） 2010（2）
申请年 2016（85）  2021（82）  2020（81）  2019（71）  2022（69）  2017（67）  2014（57）  2013（49）  2015（46）  2018（42）  2012（39）  2011（31）  2010（12）  2023（6）  2008（2）  2009（2） 
专利权人 CHINESE ACAD.（29） UNIV PEKING（25） CHONGQING GR.（23） SHANGHAI INS.（19）
BEIJING GRAP.（17） UNIV XIDIAN（13） CHONGQING MO.（12） ZHEJIANG CHI.（12）
UNIV TSINGHU.（11） HARBIN INST .（10） SAMSUNG ELEC.（10） SHANGHAI XIN.（10）
UNIV SHANGHA.（9） UNIV TIANJIN.（9） NINGBO INST .（8） CRRC IND RES.（7）
HON HAI PREC.（7） HONGFUJIN PR.（7） CHANGZHOU 2D.（6） CHANGZHOU ER.（6）

Microwave plasma chemical vapor deposition device, has metal cavity wall arranged around periphery of reaction cavity, where metal cavity wall is configured for shrinking or expanding around reaction cavity.

XU G, LIU F, WU H, AN K

Layer-by-layer structure graphene-metal composite material for use in various applications e.g. military fields, has material structure formed by repeatedly arranging graphene-metal structure according to tightly stacking technique.

ZHANG Y

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Preparing pipeline joint of loading graphene useful for hydraulic pipeline joint or fuel oil pipeline joint, involves transferring graphene film in graphene film-metal foil composite material to surface of metal pipeline joint using graphene film transfer method.

LUO G, WANG G, WANG X, LI J, ZHANG B

Wet and corrosion resistant coating is used for positive temperature coefficient (PTC) ceramic heater comprises PTC ceramic heater subjected for spraying treatment, deposition treatment, secondary spray coating and baking sequentially.

CHENG W, CHENG C

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparing hydrogen peroxide electrochemical sensor based on graphene sulfide heterojunction useful for detecting hydrogen peroxide, comprises e.g. taking graphene/iron sulfideheterojunction and photoetching on surface of graphene/sulfide heterjunction by electron beam.

WU C, CHANG Y, MA Y, CHENG Y, AI D, YU H

Graphene-coated electrode material preparation system comprises inner part of outer wall of bottom beam provided with reciprocating component, inner part of top plate and bottom plate of reciprocating component provided with vibration component, and box body respectively provided with heating plate.

WANG Y

Method for preparing conductive graphene film, involves forming concave-convex surface on copper foil by stamping, and using metal substrate chemical vapor deposition method to prepare copper-based graphene conductive film.

CHEN Q

Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.

GAO H, YANG H, BIAN C