国家/地区 中国（3） 韩国（3） 美国（3） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（3） H01L（2）
IPC C23C016/32（5）
发明人
公开年 2021（5）
申请年 2021（4） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Determining optimal ratio of metal atoms in two-dimensional material growth alloy catalyst comprises e.g. forming first metal catalyst layer, forming second metal catalyst layer, and annealing to fuse first and second metal catalyst layers.

CHENG C, LI L, CHEN H, HUANG B

Forming silicon carbide coating layer by chemical vapor reaction process, comprises placing metallic silicon powder on bottom of chamber, positioning carbon-containing material, and raising and maintaining temperature inside chamber.

LIMKWANGHYUN, SHIN I C, LIM B J, CHO N C, PARK J G, LEE H, LEE J