国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（4） B01J（2）
IPC C23C016/511（5）
发明人 MATSUMOTO T（2）
公开年 2019（2）
申请年
专利权人 TOKYO ELECTR.（2）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Carrier for Raman spectroscopy e.g. detection, comprises substrate having metal surface, portions of neighboring graphene islands not connected to form several gaps and metal particles arranged at gaps between islands on substrate.

TZENG Y, CHEN Y

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T