国家/地区 韩国（2） 美国（2）
IPC部 C（5） B（4） H（2）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（4） B01J（2）
IPC C23C016/26（5）
发明人
公开年 2016（5）
申请年 2015（5）
专利权人

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Preparation of graphene reinforced copper base electric contact material, involves annealing copper powder, performing deposition of copper powder, under methane gas and argon gas, and cooling copper powder.

FENG J, LIN J, QI J, GUO J, LIU Y

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R