国家/地区 中国（7）
IPC部 C（8）
IPC大类 C22（8）
IPC小类 C22C（8）
IPC C23C026/00（8）
发明人 LIU J（2） ZHANG L（2）
公开年 2021（3） 2023（2）
申请年 2021（2）  2022（2） 
专利权人

Preparing rGO/silicon dioxide coating on aluminum-magnesium-silicon alloy plate surface, comprises selecting polar plate, using computer engraving technology to engrave single-channel snake-shaped flow field, and removing oil and impurity.

SHAO C, HUANG J, YUAN B, LIU J, ZHANG L

Manufacturing high strength alloy steel bolt comprises taking steel for bolt, performing extrusion, hot upsetting, heat treatment and thread machining to obtain bolt blank, and performing galvanizing and zinc-aluminum coating into bolt blank.

ZHOU H

Method for Preparing oxidation resistant copper-based surface enhanced Raman scattering substrate, involves adding alloy strip into hydrochloric acid ethanol solution to remove alloy to obtain nano porous copper, carrying out acid washing on nano porous copper, and washing oxide layer off.

LIU J, NING J, ZHANG L, CHEN C, PAN D

Graphene-reinforced thermally conductive aluminum-based composite material comprises metal aluminum layer, and graphene-metal aluminum composite structure layer comprising sheet-shaped graphene interpenetrating metal aluminum.

ZHAO K, DENG C

Preparing ultra-thin metal material comprises heating and melting mixture of metal or alloy and additive components, coating on substrate, cooling, curing thin film layer on substrate and forming solid metal layer.

YANG S

Anti-rust and anti-corrosion low-nickel stainless steel material comprises chromium, boron, manganese, molybdenum, nickel, vanadium, phosphorus, silicon, and nitrogen.

PANG X, ZHAO Y, PANG M, HU Z, ZHAN Y, YANG J

Preparation of layered graphene/metal composite material for insulated gate bipolar transistor packaging of high-speed train involves hydrothermal reacting metal foil and graphene oxide solution, thermal reducing, pressing, and sintering.

CHU K, WANG X, GENG Z, HUANG D

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T