国家/地区 韩国（3） 美国（3） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC C01B031/02（6） B01J019/08（4） B82Y040/00（4）
C23C016/26（4） B01J019/12（3） B82Y030/00（3）
H01L021/268（2）
发明人 CHOI I（2） CHOI I S（2） LEE K（2）
LEE K J（2）
公开年 2012（6）
申请年 2011（6）
专利权人 KOREA ADV IN.（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Adsorption method of nanostructure with graphene structure to minute material, involves dispersing nanostructure which has graphene structure in liquid containing surfactant, and adsorbing nanostructure to surface of minute material.

YAMADA K, MURAKAMI H

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H