国家/地区 中国（5） 日本（5） 欧洲专利局（EPO）（4） 西班牙（4） 韩国（4） 台湾（4） 美国（4） 世界知识产权组织（4）
IPC部 B（6）
IPC大类 B21（6）
IPC小类 B21B（6）
IPC C22F001/08（6）
发明人 CHIBA Y（5） CHIBA G（4） YOSHIHIRO C（3）
CHIBA YOSHIHIRO（2）
公开年 2013（3） 2012（2）
申请年 2012（4） 
专利权人 JX NIPPON MI.（5） NIPPON MININ.（4） NIPPON MININ.（4） NIPPON MININ.（2）

Preparing copper alloy semiconductor lead frame for circuit board, comprises heating copper alloy ingots, removing oxide, aging, adding copper alloy semi-finished product silver plating bath for silver-plated plating treatment, and activating.

CAO G, LI C, XU J, YIN H

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Copper foil used for graphene manufacture, consists of copper plating layer containing hydrogen in ratio above preset value, and having glossiness above preset value in rolling parallel direction and right angle direction.

CHIBA Y

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G