国家/地区 日本（5）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C01B032/182（5）
发明人 BEDWORTH P V（2） HEISE S E（2） IFUKU R（2）
MATSUMOTO T（2） SINTON S W（2） SWETT J L（2）
公开年 2017（2）
申请年 2016（2） 
专利权人 LOCKHEED MAR.（2） TOKYO ELECTR.（2）

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M