国家/地区 中国（6） 世界知识产权组织（5） 美国（4） 欧洲专利局（EPO）（3） 日本（3） 韩国（2）
IPC部 B（7）
IPC大类 B32（7）
IPC小类 B32B（7）
IPC C23C016/26（5） B32B009/00（4） B32B038/10（3）
C01B032/186（3） B32B009/04（2） B32B015/01（2）
B32B015/20（2） B32B037/00（2） C01B031/04（2）
C01B032/182（2） C01B032/194（2） H01L029/16（2）
发明人
公开年 2017（7）
申请年 2016（7）
专利权人

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Transfer method of graphene for laminating material and designing shape of object, involves adhering graphene to one side portion of imprint receptive seat, and passing imprint receptive seat and metal sheet through etchant to graphene.

KIM Y K, YONG K K, KIM Y

Composite material used as conductive material, comprises plate-shaped copper substrate and graphene which combines with copper substrate to form layered structure, where thickness direction copper substrate is single crystalline.

XIONG D, CAO M, TAN Z, FAN G, LI Z, ZHANG D

Copper-graphite composite film has copper foil layers and graphene layer that are arranged in preset order, where thickness of copper foil layers and graphene layer are set as preset values.

YANG Y, YANG X, GUO H, JIANG W

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V