国家/地区 韩国（6） 美国（4） 世界知识产权组织（3） 日本（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人
公开年 2011（3） 2009（2） 2010（2）
申请年 2009（7）
专利权人

Manufacture of graphene layer used for electronic circuit, involves mounting molecular beam epitaxy chamber on substrate and forming graphene layers by supplying carbon source on substrate.

SEO D

Manufacture of graphene for, e.g. solar cells, involves providing metallic foil, forming carbon thin film as metal thin film, irradiating laser to carbon film, and cooling mixed layer of carbon and metal formed by laser irradiation.

HUN L B, HWANG H, CHO C

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene involves producing thermal plasma flame, producing carbon atom beam by adding air or liquid carbon source material into flame, producing beam with decreasing energy of carbon atom beam and crashing carbon atom beam.

SEO J, KIM J, JUNG S S, JU H K

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M