国家/地区 台湾（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/26（6）
发明人
公开年 2021（2）
申请年
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A