国家/地区 美国（14） 韩国（7） 世界知识产权组织（7） 中国（5） 欧洲专利局（EPO）（3） 台湾（2）
IPC部 B（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C01B031/04（12） C01B031/02（10） C23C016/26（10）
B82Y040/00（7） B82Y030/00（5） C23C016/44（4）
H01G009/042（3） H01G011/36（3） H01L021/02（3）
H01L029/16（3） B01J019/18（2） B32B038/10（2）
B82Y010/00（2） C01B032/186（2） C23C016/455（2）
发明人 CHOI J（2） SHIN H（2）
公开年 2014（16）
申请年 2013（16）
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（2）

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Hydrophobic nano-graphene laminate used as graphene device e.g. graphene electrode, comprises trifluoromethyl-functionalized hollow spherical material with diameter of preset range, and has thickness and contact angle of preset range.

JANG J H, LEE J S

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Transferring graphene layer, comprises executing electrostatic process to surface of substrate, electrostatically adsorbing graphene layer formed on metal carrier layer onto substrate, and immersing substrate into etching solution.

CHEN C, WANG D, HUANG I, CHEN C W, CHEN C C, WANG D Y, HUANG I S

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S