国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2013（2） 2022（2）
申请年 2021（2） 
专利权人 CALIFORNIA I.（2）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T