国家/地区 美国（7） 中国（6） 韩国（5） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 澳大利亚（2） 日本（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（7）
发明人
公开年 2017（5） 2016（2）
申请年 2016（7）
专利权人

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Graphene-coated substrate has graphene layer which is formed in direct contact with surface of dielectric substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H