国家/地区 中国（5） 美国（4） 韩国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 H01J（9）
IPC C23C016/26（5） H01J037/32（4） C23C016/44（3）
C23C016/455（3） H01J009/02（3） C23C014/35（2）
C23C016/02（2） C23C016/30（2） C23C016/54（2）
C23C028/00（2） H01L021/02（2） H01L021/285（2）
H01L021/768（2） H01L023/532（2）
发明人 SHIN H（2） SHIN H J（2） ZHAO P（2）
公开年 2022（9）
申请年 2021（7） 
专利权人 APPLIED MATE.（2） SAMSUNG ELEC.（2）

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing transmission electron microscope carrier net containing ultra-clean graphene carrier layer useful in situ characterization and tracking of liquid phase reaction comprises e.g. combining transmission electron microscope carrier with graphene film on surface of iron(III) chloride solution.

REN Q, ZHANG Y, ZHAO P

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Preparing diamond-multilayer graphene composite cathode material e.g. used in emission display, involves grinding silicon substrate in diamond powder uniformly and compactly, putting grinded silicon substrate into suspension liquid made of diamond powder.

LIU H, GUAN L, WANG B, ZHANG W, XIONG Y

Preparing graphene field emission source useful in field emission cathode of electronic device e.g. display device, comprises slowly cooling carbon atom dissolved to metal material to form graphene layer by stage cooling, closing power supply to room temperature, and taking out metal material.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S