国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C016/26（4） H01J037/32（4） C23C016/04（3）
C23C016/505（3） H01L021/02（3） H01L021/285（3）
H01L021/768（3） C01B032/186（2） C23C016/452（2）
C23C016/455（2） C23C016/50（2） C23C016/52（2）
发明人 NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（5）
申请年 2020（3）  2021（2） 
专利权人 LAM RES CORP（2）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Electron-emitting element e.g. cold cathode-type electron source, has coating membrane that is film which transmits electron, and second electrode that is protective film of different material, and comprises electron emission surface.

MURAKAMI K, NAGAO M, KATSUHISA M, MASAYOSHI N

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I