国家/地区 韩国（13） 美国（7） 世界知识产权组织（7） 日本（4） 台湾（3） 中国（2） 欧洲专利局（EPO）（2） 法国（2）
IPC部 B（17）
IPC大类 B01（17）
IPC小类 B01J（17）
IPC C01B031/02（17） C23C016/26（12） C01B031/04（9）
B82Y030/00（6） B82Y040/00（6） B01J019/08（4）
B01J019/12（3） B01J023/72（3） B01J023/755（3）
C23C016/02（3） B01J023/52（2） B01J023/75（2）
B01J023/76（2） B01J037/02（2） B01J037/34（2）
发明人 KIM K H（3） BACSA R（2） CHOI I S（2）
LEE K J（2） SERP P（2）
公开年 2013（17）
申请年 2012（10）  2011（5）  2013（2） 
专利权人 KOREA ADVANC.（3） SRC CORP（3） CENT NAT REC.（2） INST NAT POL.（2）
KOREA ADV IN.（2） UNIV SUNGKYU.（2）

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing a metal wire, comprises forming graphene in a polymer layer surface and then irradiating, and coating a carbon source polymer on a metal wire or the board by spin coating, dip-coating or spray coating.

KIM S M, YUN K S, JUN S W, YUN K