国家/地区 中国（8） 美国（2）
IPC部 C（10）
IPC大类 C30（10）
IPC小类 C30B（10）
IPC C30B029/02（6） C30B025/00（3） C30B025/02（2）
C30B025/18（2） C30B029/40（2）
发明人 ZHANG L（10）
公开年 2014（2） 2023（2）
申请年 2014（2）  2016（2）  2023（2） 
专利权人 UNIV WUHAN T.（3）

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T

Fuel cell e.g. proton exchange membrane fuel cell, comprises core-shell nanostructure comprising palladium nano-substrate having cubic shape coated with uniform atomic overlayers of epitaxially deposited zero-valent platinum atoms.

ZHANG L, PARK J, WANG X, CHOI S, XIE S, XIA Y

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Gallium nitride crystals preparation involves preparing graphene nanosheet and dispersing nanosheet in solution of N,N-dimethylformamide or N-methyl pyrrolidone to obtain oxidized graphene nanosheet, which is later dispersed in water.

TIAN Y, WU Y, LI X, ZHANG L, DAI Y, SHAO Y, HAO X, HUO Q

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L