国家/地区 美国（4） 世界知识产权组织（3） 中国（2）
IPC部 B（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C30B025/00（5）
发明人
公开年 2013（2）
申请年
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Formation of graphene layer comprises establishing insulating layer on substrate to form seed region and exposing seed material in seed region to carbon-containing precursor gas.

KAMINS T I, QUITORIANO N, WILLIAMS R S