国家/地区 中国（21） 美国（17） 世界知识产权组织（11） 韩国（9） 日本（6） 欧洲专利局（EPO）（5） 台湾（5） 加拿大（2）
IPC部 C（41）
IPC大类 C30（41）
IPC小类 C30B（41）
IPC C30B029/02（25） C01B031/04（14） C01B031/02（11）
C30B025/02（11） C30B025/18（10） B82Y040/00（9）
B82Y030/00（7） C23C016/26（4） C30B029/60（4）
C30B001/02（3） C30B001/10（3） C30B025/00（3）
C30B025/10（3） C30B029/36（3） C30B029/64（3）
发明人 CHAI Z（4） HAN D（4） HAO Y（4）
WANG D（4） YAN Y（4） ZHANG J（4）
MA T（3） NING J（3） CHOI J W（2）
LI X（2） LIU Z（2） MA S（2）
PAN G（2） SUN G（2） WANG G（2）
公开年 2014（41）
申请年 2013（24）  2014（12）  2012（5） 
专利权人 UNIV XIDIAN（4） NIPPON MININ.（2） SHANGHAI INS.（2） UNIV BEIJING.（2）
UNIV BEIJING.（2） UNIV KYUNGHE.（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Growing graphene on a substrate, comprises forming a metal oxide layer on substrate using reactive metal oxide to prepare structure, and growing graphene by heat treatment, while exposing the structure to gas containing carbon.

CHOI J W

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.

DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y

Cubic phase cobalt/graphene composite material used as absorbing material, has monocrystalline structure, and comprises metal cobalt as face-centered cubic structure, and graphene as sheet-shaped structure.

MA S, MA T, PAN G, SUN G

Hexagonal phase cobalt-graphene polycrystalline composite material used as shielding material has stacked closely-packed cobalt and graphite sheets.

MA S, MA T, PAN G, SUN G

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y