国家/地区 中国（3） 韩国（3） 美国（3） 台湾（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（4） B82Y040/00（3） C01B031/02（3）
G03F007/00（2） G03F007/004（2）
发明人
公开年 2013（5）
申请年 2012（6）
专利权人

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Method for patterned graphene layer involves forming catalytic metal layer on graphene layer, placing patterned film on substrate, removing catalytic metal layer, providing graphene layer on substrate, and removing support layer.

JUNG M, RHO J, SEO B, MOON J

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Preparation of graphite/graphite pattern used in FET, by spin-coating photoresist onto substrate, thermally treating photoresist pattern to form graphite layer, and performing vapor deposition to form graphene-containing layer.

WANG X, ZHANG Z, GUO Y

Preparation of graphene used for transparent electrode for display device, transistor and integrated circuit, involves forming photosensitive layer on substrate, heating photosensitive layer and growing graphene on substrate.

LEE S W, HUNG M, PANIN G, KANG T W, WUK L S, LEE S J, UK L S, WON G T, JU L S, HEE C J

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J