国家/地区 韩国（3） 中国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人 KIM H（2） KIM H Y（2） KIM S K（2）
LEE S M（2） MI K H（2）
公开年 2022（5）
申请年 2022（3）  2021（2） 
专利权人 KOREA ELECTR.（2）

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Method for preparing micro-nano composite of graphene quantum dot array, involves removing mask glue, annealing to remove residual glue, and etching to remove surface sacrificial layer to obtain final graphene array structure.

ZHAO Q, YANG Z, CHEN R, PENG F, YAN Z, CHANG Z, HUANG X