国家/地区 韩国（8） 美国（2）
IPC部 B（8）
IPC大类 B01（8） C01（8） H01（2）
IPC小类 B01J（8）
IPC B01J006/00（8）
发明人 LEE H（2）
公开年 2014（6） 2015（2）
申请年 2013（8）
专利权人 UNIV SUNGKYU.（3）

Filling holes of graphene thin film, comprises preparing graphene thin film, filling aromatic compound or nano-carbon material into graphene thin film holes and combining aromatic compound or nano-carbon material with holes by heat treating.

HAN J H

Producing heteroatom doped graphene used for e.g. organic solar cells, comprises reacting substituted catechol compound with protic solvent to form solution, followed by forming thin film by polymerizing, reduction on the film, carbonizing.

LEE H S, RYU S W, YOU I

Manufacturing graphene sheet involves preparing molten iron by reacting iron ore with carbonaceous reducing agent, and obtaining reductant gas containing carbon monoxide during production of molten iron and then producing graphene sheet.

YOUN J Y

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Preparation of graphene oxide involves sintering powder comprising metal and graphite, acid-treating, electrolyzing, acid-treating separated waste graphite and reacting graphite with oxidizing agent.

LEE H

Producing graphene oxide using graphite waste, comprises e.g. sintering powder containing graphite and metal, acid treating and electrolyzing sintered powder, adding acid and oxidizing agent into separated graphite waste, and heat treating.

LEE H

Graphene-based porous composite used in electrode active material comprises graphene; and a structure former contacting the grapheme, and is a metal oxide or a carbon compound and comprises pores in it.

SONG L H

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K