国家/地区 美国（5） 日本（4） 韩国（4）
IPC部 B（5） C（4） H（3）
IPC大类 B01（5） C01（4） C23（3）
H01（3）
IPC小类 B01J（5）
IPC B01J023/755（5）
发明人 MATSUMOTO T（5） IFUKU R（2） KASHIWAGI Y（2）
公开年 2016（2）
申请年 2015（2） 
专利权人 TOKYO ELECTRON LTD（5）

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Patterning component designed to contact with substrate having graphene oxide film used in wirings of damascene structure of semiconductor device, consists of metal layer with pattern formed on patterning component.

MATSUMOTO T, KASHIWAGI Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T