国家/地区 韩国（7） 美国（5） 世界知识产权组织（4） 法国（2） 日本（2）
IPC部 B（13）
IPC大类 B01（13）
IPC小类 B01J（13）
IPC C01B031/02（13）
发明人 CHOI I S（4） LEE K J（4） BACSA R（2）
CHOI I（2） HONG B H（2） LEE K（2）
SERP P（2）
公开年 2012（6） 2013（5） 2011（2）
申请年 2011（13）
专利权人 KOREA ADV IN.（4） CENT NAT REC.（2） INST NAT POL.（2） KOREA ADVANC.（2）
UNIV SUNGKYU.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Adsorption method of nanostructure with graphene structure to minute material, involves dispersing nanostructure which has graphene structure in liquid containing surfactant, and adsorbing nanostructure to surface of minute material.

YAMADA K, MURAKAMI H

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I