国家/地区 韩国（5） 美国（4） 世界知识产权组织（4） 中国（3） 日本（3）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 B01J（7）
IPC C01B031/02（7）
发明人 BONG H（2） CHO K（2）
公开年 2015（4） 2014（2）
申请年 2014（7）
专利权人 CENT ADVANCE.（2）

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M