国家/地区 欧洲专利局（EPO）（5）
IPC部 B（5）
IPC大类 B01（5） C01（5） H01（4）
B82（3） C23（2）
IPC小类 B01J（5）
IPC C01B031/02（5） C01B031/04（5） B01J019/12（3）
B82Y030/00（3） B82Y040/00（3） B01J019/08（2）
C23C016/26（2）
发明人 FISHER T S（2）
公开年 2013（5）
申请年 2012（3）  2013（2） 
专利权人 FISHER T S（2） PURDUE RES F.（2）

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Carbonaceous material used for e.g. electrode catalyst, comprises graphene doped with metal atom and at least one type of nonmetallic atom chosen from nitrogen atom, boron atom, sulfur atom, and phosphorus atom.

NAKANISHI S, KAMAI R, SUZUKI Y, HASHIMOTO K, KAMIYA K

Material useful to provide refrigeration, and for photovoltaic or thermionic power generation, comprises carbon allotrope (graphene or graphite) doped with boron nitride, and an alkali metal (potassium) intercalated within carbon allotrope.

FISHER T, FISHER T S

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A