国家/地区 美国（6） 世界知识产权组织（4） 日本（2）
IPC部 B（6）
IPC大类 B05（6）
IPC小类 B05D（6）
IPC C01B031/04（6） B05D005/12（3） B32B003/10（3）
B82Y040/00（3） C01B031/02（3） B05C003/20（2）
B05D005/00（2） B32B009/04（2） B82Y030/00（2）
C01B032/194（2） H01L021/28（2） H01L029/16（2）
发明人 MILLER S A（3） YAGER T A（2）
公开年
申请年 2013（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（6）

System used to at least partially alter defect area in layer of graphene, on substrate, comprises chamber to receive layer including some graphene and defect areas in graphene, and container to e.g. react substrate to produce cationic area.

MILLER S A, YAGER T A

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A